经筋针刺法与常规针刺法治疗膝骨关节炎疗效比较的Meta分析 

目的 评价经筋针刺法和常规针刺法治疗膝骨关节炎(knee Osteoarthritis,KOA)的临床疗效。方法 计算机检索中国知网、万方、维普、Cochrane临床对照试验中心注册库及PubMed数据库,收集建库至2019年4月25日发表的有关经筋针刺法治疗膝骨关节炎的随机对照试验(RCT),将收集到的文献进行筛选,...
《世界科学技术-中医药现代化》  2020-04-22 09:21 下载次数(195)| 被引次数(0)

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer 

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried o...
《Chinese Physics B》  2017年 第01期 下载次数(46)| 被引次数(4)

Neuroprotective role of Batroxobin in cardiopulmonary resuscitation rabbits 

BACKGROUND:Batroxobin has been found to have protective effect on cerebral ischemia-reperfusion,and cardiopulmonary resuscitation(CPR)is the common cause of glo...
《Neural Regeneration Research》  2007年 第04期 下载次数(14)| 被引次数(0)

回程轨迹参数对铝合金球面件旋压成形性能的影响(英文) 

在多道次普旋成形中,多采用往程和回程结合的旋轮轨迹形式来提高材料的成形性能。为了深入探究回程旋压,对2024-O铝合金半球件回程旋压轨迹进行研究。基于二次Bezier曲线,建立普旋回程旋轮轨迹的参数化设计方法;并结合有限元技术,分析回程轨迹参数对2024-O铝合金半球件旋压应力、应变和减薄率的影响规律。通过对回程旋压的...
《Transactions of Nonferrous Metals Society of China》  2018年 第02期 下载次数(92)| 被引次数()

Novel high- with low specific on-resistance high voltage lateral double-diffused MOSFET 

A novel voltage-withstand substrate with high-K(HK, k 3.9, k is the relative permittivity) dielectric and low specific on-resistance(Ron,sp) bulk-silicon, hig...
《Chinese Physics B》  2017年 第02期 下载次数(44)| 被引次数(1)

A new double gate SOI LDMOS with a step doping profile in the drift region 

A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded ...
《半导体学报》  2009年 第08期 下载次数(163)| 被引次数(5)

土耳其阿达那地区地方性利什曼病传统诊断技术与聚合酶链反应诊断技术的比较 

Background: Cutaneous leishmaniasis (CL) has long been reported in the Cukurova region. We have compared the sensitivity of the conventional methods of diagnosi...
《世界核心医学期刊文摘(皮肤病学分册)》  2006年 第08期 下载次数(7)| 被引次数(0)

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure 

The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The u...
《Chinese Physics B》  2008年 第01期 下载次数(17)| 被引次数(0)

A comb-gate silicon tunneling field effect transistor with improved on-state current 

In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated. Source implantation masked b...
《Science China(Information Sciences)》  2013年 第07期 下载次数(60)| 被引次数(4)

Effects of aggregating forests, establishing forest road networks, and mechanization on operational efficiency and costs in a mountainous region in Japan 

We investigated forest road networks and forestry operations before and after mechanization on aggregated forestry operation sites.We developed equations to est...
《Journal of Forestry Research》  2013年 第04期 下载次数(10)| 被引次数(1)

A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate 

A novel high performance Semi SJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift re...
《Journal of Semiconductors》  2016年 第08期 下载次数(41)| 被引次数(1)

A novel double trench reverse conducting IGBT with robust freewheeling switch 

The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor(RC-IGBT) results in the non-uniform curre...
《Journal of Semiconductors》  2014年 第08期 下载次数(79)| 被引次数(2)

A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam 

A novel coupled multi-active-region large optical cavity structure cascaded by a tunnel junction is proposed to solve the problems of facet catastrophic optical...
《Chinese Physics B》  2012年 第09期 下载次数(39)| 被引次数(2)

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer 

A novel low specific on-resistance(Ron,sp) lateral double-diffused metal oxide semiconductor(LDMOS) with a buried improved super-junction(BISJ) layer is propose...
《Chinese Physics B》  2014年 第03期 下载次数(51)| 被引次数(1)

An improved trench gate super-junction IGBT with double emitter 

An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter re...
《Journal of Semiconductors》  2015年 第01期 下载次数(87)| 被引次数(1)

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