A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer 

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried o...
《Chinese Physics B》  2017年 第01期 下载次数(46)| 被引次数(4)

Novel high- with low specific on-resistance high voltage lateral double-diffused MOSFET 

A novel voltage-withstand substrate with high-K(HK, k 3.9, k is the relative permittivity) dielectric and low specific on-resistance(Ron,sp) bulk-silicon, hig...
《Chinese Physics B》  2017年 第02期 下载次数(44)| 被引次数(1)

A new double gate SOI LDMOS with a step doping profile in the drift region 

A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded ...
《半导体学报》  2009年 第08期 下载次数(163)| 被引次数(5)

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure 

The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The u...
《Chinese Physics B》  2008年 第01期 下载次数(17)| 被引次数(0)

A comb-gate silicon tunneling field effect transistor with improved on-state current 

In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated. Source implantation masked b...
《Science China(Information Sciences)》  2013年 第07期 下载次数(60)| 被引次数(4)

A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate 

A novel high performance Semi SJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift re...
《Journal of Semiconductors》  2016年 第08期 下载次数(41)| 被引次数(1)

A novel double trench reverse conducting IGBT with robust freewheeling switch 

The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor(RC-IGBT) results in the non-uniform curre...
《Journal of Semiconductors》  2014年 第08期 下载次数(79)| 被引次数(2)

A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam 

A novel coupled multi-active-region large optical cavity structure cascaded by a tunnel junction is proposed to solve the problems of facet catastrophic optical...
《Chinese Physics B》  2012年 第09期 下载次数(39)| 被引次数(2)

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer 

A novel low specific on-resistance(Ron,sp) lateral double-diffused metal oxide semiconductor(LDMOS) with a buried improved super-junction(BISJ) layer is propose...
《Chinese Physics B》  2014年 第03期 下载次数(51)| 被引次数(1)

An improved trench gate super-junction IGBT with double emitter 

An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter re...
《Journal of Semiconductors》  2015年 第01期 下载次数(87)| 被引次数(1)

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer 

Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with g...
《Chinese Physics B》  2013年 第08期 下载次数(52)| 被引次数(2)

极化库仑场散射对凹栅槽AlGaN/GaN异质结场效应晶体管器件特性影响研究 

AlGaN/GaNs异质结场效应晶体管(HFET)具有高饱和电子漂移速度、高跨导、高击穿电压等优良特性。不仅如此,由于GaN材料的自发极化和压电极化效应,在没有掺杂的条件下,AlGaN/GaN异质结界面就存在浓度高达1 X 1013 cm~(-2)的二维电子气(n_(2D))。同时也正是由于异质结界面存在高面密度的二维...
山东大学  硕士论文  2018年 下载次数(76)| 被引次数()

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer 

A novel ultralow turnoff loss dual-gate silicon-on-insulator(SOI) lateral insulated gate bipolar transistor(LIGBT) is proposed. The proposed SOI LIGBT features ...
《Chinese Physics B》  2016年 第12期 下载次数(65)| 被引次数(0)

Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on SOI substrate 

A new lateral insulated-gate bipolar transistor(LIGBT) with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventio...
《半导体学报》  2010年 第06期 下载次数(84)| 被引次数(2)

Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection 

A novel NMOS triggered LIGBT(NTLIGBT) structure is proposed for electrostatic discharge(ESD) protection in this paper. The structure utilizes internal NMOS to t...
《Journal of Semiconductors》  2019年 第05期 下载次数(19)| 被引次数(1)

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